A Si LDMOS-Based UHF Power Amplifier
نویسندگان
چکیده
1 This work was undertaken as the Electronics and Telecommunications Engineering degree Final Project of its two first authors. Abstract The design, implementation and performance tests of an Si LDMOS-Based power amplifier for UHF is presented. The amplifier, conceived for medium power GSM-900 base-station applications, consists of a Class-AB single stage circuit designed for maximum output power capability, and optimized efficiency. It showed a 1dB compressed output power of 6.3W with an associated power added efficiency of 60%.
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